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MDF7N50TH 데이터시트(PDF) 1 Page - MagnaChip Semiconductor. |
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MDF7N50TH 데이터시트(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Dec. 2009. Version 1.2 MagnaChip Semiconductor Ltd . 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V TC=25 oC 7.0 A Continuous Drain Current (※) TC=100 oC ID 4.2 A Pulsed Drain Current (1) IDM 28 A TC=25 oC 36 Power Dissipation Derate above 25 oC PD 0.29 W W/ oC Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) EAS 270 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 Thermal Resistance, Junction-to-Case (1) RθJC 3.5 oC/W MDF7N50 N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDF7N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 7.0A @ VGS = 10V RDS(ON) ≤ 0.9 @ VGS = 10V Applications Power Supply HID Lighting D G S S D G |
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