MDF9N50TH datasheet(1/6 Pages) MGCHIP

부품명	MDF9N50TH

상세설명	N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

PDF	6 Pages

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제조업체	MGCHIP [MagnaChip Semiconductor.]

홈페이지	http://www.magnachip.co.kr

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1 / 6 page

Dec.2009. Version 1.2

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

TC=25

oC

9.0

A

Continuous Drain Current (※)

TC=100

oC

ID

5.5

A

Pulsed Drain Current

(1)

IDM

36

A

TC=25

oC

38

Power Dissipation

Derate above 25

oC

PD

0.3

W

W/

oC

Peak Diode Recovery dv/dt

(3)

Dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

300

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

Thermal Resistance, Junction-to-Case

(1)

RθJC

3.3

oC/W

MDF9N50

N-Channel MOSFET 500V, 9.0 A, 0.85Ω

General Description

The MDF9N50 uses advanced MagnaChip’s MOSFET

Technology, which provides low on-state resistance, high

switching performance and excellent quality.

MDF9N50 is suitable device for SMPS, high Speed switching

and general purpose applications.

Features

VDS = 500V

ID = 9.0

@ VGS = 10V

RDS(ON) ≤ 0.85

@ VGS = 10V

Applications

Power Supply

HID

Lighting

S

D

G

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Inchange Semiconductor ...	MDF9N50TH	322Kb / 2P	isc N-Channel MOSFET Transistor

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TRANSYS Electronics Lim...	IRF840	152Kb / 1P	Power MOSFET ( VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A )
Fairchild Semiconductor	FDP10N50F	415Kb / 9P	N-Channel MOSFET 500V, 9A, 0.85廓
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MDF9N50TH 데이터시트(PDF) 1 Page - MagnaChip Semiconductor.

MDF9N50TH 데이터시트(HTML) 1 Page - MagnaChip Semiconductor.

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