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MDF1903TH 데이터시트(PDF) 1 Page - MagnaChip Semiconductor. |
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MDF1903TH 데이터시트(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Mar. 2016. Version 1.1 MagnaChip Semiconductor Ltd. 1 ㄹ Absolute Maximum Ratings (Tc = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (1) TC=25 oC ID 12 A TC=70 oC 9.6 Pulsed Drain Current IDM 40 A Power Dissipation TC=25 oC PD 33.8 W TC=70 oC 21.7 Single Pulse Avalanche Energy (2) EAS 25.9 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case RθJC 3.7 MDF1903 Single N-channel Trench MOSFET 100V, 12A, 110m Ω D G S Features VDS = 100V ID = 12A @VGS = 10V RDS(ON) (MAX) < 110m Ω @VGS = 10V < 115m Ω @VGS = 6.0V 100% UIL Tested General Description The MDF1903 uses advanced MagnaChip ’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1903 is suitable device for DC to DC converter and general purpose applications. G D S |
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