| 전자부품 데이터시트 검색엔진 |
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MDF1921 데이터시트(PDF) 1 Page - MagnaChip Semiconductor. |
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MDF1921 데이터시트(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Mar. 2014. Version 1.1 MagnaChip Semiconductor Ltd. 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (1) TC=25 oC ID 60 A TC=100 oC 38 Pulsed Drain Current IDM 240 Power Dissipation TC=25 oC PD 36 W TC=100 oC 15 Single Pulse Avalanche Energy (2) EAS 200 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case RθJC 3.5 MDF1921 Single N-channel Trench MOSFET 100V, 60A, 4.8m Ω Features VDS = 100V ID = 60A @VGS = 10V RDS(ON) < 4.8 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested General Description The MDF1921 uses advanced MagnaChip ’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1921 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. TO-220F D G S |
유사한 부품 번호 - MDF1921 |
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유사한 설명 - MDF1921 |
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