| 전자부품 데이터시트 검색엔진 |
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IXDP35N60B 데이터시트(PDF) 4 Page - IXYS Corporation |
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IXDP35N60B 데이터시트(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() © 2000 IXYS All rights reserved 4 - 4 IXDP 35N60 B IXDH 35N60 B IXDH 35N60 BD1 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 10 20 30 40 50 60 0 1 2 3 4 0 20 40 60 80 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 0 100 200 300 400 10-5 10-4 10-3 10-2 10-1 100 101 0.001 0.01 0.1 1 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 0 15 30 45 60 single pulse V CE = 300V V GE = ±15V R G = 10W T J = 125°C IXDH30N60B V CE = 300V V GE = ±15V I C = 35A T J = 125°C 0 100 200 300 400 500 600 700 0 20 40 60 80 100 120 R G = 10 W T J = 125°C V CE = 300V V GE = ±15V R G = 10W T J = 125°C E on V CE = 300V V GE = ±15V I C = 35A T J = 125°C t d(on) t r E off t d(off) t f E on t d(on) t r E off t d(off) t f I C A I C A E off E on t t R G W R G W V CE t s mJ E on mJ E off ns t ns t I CM K/W Z thJC IGBT diode V A mJ ns ns mJ |
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