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MDF18N50B 데이터시트(PDF) 1 Page - MagnaChip Semiconductor. |
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MDF18N50B 데이터시트(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 8 page ![]() Dec 2011. Version 1.0 MagnaChip Semiconductor Ltd . 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol MDP18N50B MDF18N50B Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current TC=25 oC ID 18 18* A TC=100 oC 11 11* A Pulsed Drain Current (1) IDM 72 72* A Power Dissipation TC=25 oC PD 236 37 W Derate above 25 oC 1.89 0.29 W/ oC Repetitive Avalanche Energy (1) EAR 23.6 mJ Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) EAS 950 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol MDP18N50B MDF18N50B Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 62.5 oC/W Thermal Resistance, Junction-to-Case (1) RθJC 0.53 3.4 MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description The MDP/F18N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F18N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 18.0A @VGS = 10V RDS(ON) ≤ 0.27 @VGS = 10V Applications Power Supply PFC Ballast |
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