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MDP1901TH 데이터시트(PDF) 1 Page - MagnaChip Semiconductor. |
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MDP1901TH 데이터시트(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() August. 2010. Version 1.2 MagnaChip Semiconductor Ltd. 1 Absolute Maximum Ratings (Tc = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC=25 oC ID 36 A TC=100 oC 24 A Pulsed Drain Current IDM 144 A Power Dissipation TC=25 oC PD 34 W TC=100 oC 14 Single Pulse Avalanche Energy (2) EAS 200 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient RθJA 40 oC/W Thermal Resistance, Junction-to-Case RθJC 2.3 MDP1901 Single N-channel Trench MOSFET 100V, 36A, 22 mΩ Features VDS = 100V ID = 36A @VGS = 10V RDS(ON) < 22m Ω @VGS = 10V < 25m Ω @VGS = 6.0V General Description The MDP1901 uses advanced MagnaChip ’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1901 is suitable device for DC/DC Converters and general purpose applications. D G S S G D |
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