MDP1921 datasheet(1/6 Pages) MGCHIP

부품명	MDP1921

상세설명	Single N-channel Trench MOSFET 100V, 120A, 4.5m(ohm)

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제조업체	MGCHIP [MagnaChip Semiconductor.]

홈페이지	http://www.magnachip.co.kr

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1 / 6 page

Jun. 2013. Version 1.2

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC (Silicon Limited)

ID

153

A

TC=25

oC (Package Limited)

120

TC=100

oC

97

Pulsed Drain Current

IDM

480

Power Dissipation

TC=25

oC

PD

223

W

TC=100

oC

89

Single Pulse Avalanche Energy

(2)

EAS

609

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

0.56

MDP1921

Single N-channel Trench MOSFET 100V, 120A, 4.5m

Ω

Features



VDS = 100V



ID = 120A @VGS = 10V



RDS(ON)

< 4.5

mΩ @VGS = 10V



100% UIL Tested



100% Rg Tested

General Description

The MDP1921 uses advanced MagnaChip

’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDP1921 is suitable device for DC/DC Converter

and general purpose applications.

TO-220

D

G

S

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MDP1921 데이터시트(PDF) 1 Page - MagnaChip Semiconductor.

MDP1921 데이터시트(HTML) 1 Page - MagnaChip Semiconductor.

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