© Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 2

1

Publication Order Number:

MMDFS3P303/D

MMDFS3P303

Power MOSFET

3 Amps, 30 Volts

P–Channel SO–8, FETKY

t

The FETKY product family incorporates low RDS(on), MOSFETs

packaged with industry leading, low forward drop, low leakage

Schottky Barrier rectifiers to offer high efficiency components in a

space saving configuration. Independent pinouts for MOSFET and

Schottky die allow the flexibility to use a single component for

switching and rectification functions in a wide variety of applications

such as Buck Converter, Buck–Boost, Synchronous Rectification,

Low Voltage Motor Control, and Load Management in Battery Packs,

Chargers, Cell Phones and other Portable Products.

Board Space Savings

(Notes 1. & 2.)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MW)

VDGR

30

Vdc

Gate–to–Source Voltage – Continuous

VGS

"20

Vdc

Drain Current

– Continuous @ TA = 25°C

– Continuous @ TA = 100°C

– Single Pulse (tp

v 10 ms)

ID

ID

IDM

3.5

2.25

12

Adc

Apk

Total Power Dissipation @ TA = 25°C

(Note 3.)

PD

2.0

Watts

Single Pulse Drain–to–Source Avalanche

Energy – STARTING TJ = 25°C

VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc,

IL = 9.0 Apk, L = 10 mH, RG = 25 W

EAS

375

mJ

1. Negative sign for P–channel device omitted for clarity.

2. Pulse Test: Pulse Width

≤ 250 µs, Duty Cycle ≤ 2.0%.

3. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

10 sec. max.

Anode

1

2

3

4

8

7

6

5

Top View

Anode

Source

Gate

Cathode

Cathode

Drain

Drain

Device

Package

Shipping

ORDERING INFORMATION

MMDFS3P303R2

SO–8

2500 Tape & Reel

http://onsemi.com

D

S

G

P–Channel

SO–8

CASE 751

STYLE 18

LYWW

MARKING

DIAGRAM

6N303

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

1

8

3 AMPERES

30 VOLTS

RDS(on) = 100 mW

VF = 0.42 Volts