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ESDALC6-4N4 데이터시트(PDF) 2 Page - STMicroelectronics |
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ESDALC6-4N4 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics ESDALC6-4N4 2/11 Doc ID 022191 Rev 2 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 2. Electrical characteristics (values, Tamb = 25 °C) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP ESD IEC 61000-4-2, level 4 (contact discharge) 11 kV PPP Peak pulse power dissipation (8/20 µs)(1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 27 W Ipp Repetitive peak pulse current typical value (8/20 µs) 2.3 A Tj Maximum junction temperature 125 °C Tstg Storage temperature range -55 + 150 °C Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage V = Clamping voltage I = Peak pulse current BR RM RM RM CL PP V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 V IRM VRM = 3 V 70 nA VCL Ipp = 1 A, 8/20 µs 10 V CVR = 0 V, F = 1 MHz, Vosc = 30 mV 9.5 11 pF |
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