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PDTC143Z 데이터시트(PDF) 4 Page - NXP Semiconductors |
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PDTC143Z 데이터시트(HTML) 4 Page - NXP Semiconductors |
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4 / 14 page ![]() 2004 Aug 16 4 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 4.7 k Ω, R2 = 47 kΩ PDTC143Z series ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PDTC143ZE − plastic surface mounted package; 3 leads SOT416 PDTC143ZEF − plastic surface mounted package; 3 leads SOT490 PDTC143ZK − plastic surface mounted package; 3 leads SOT346 PDTC143ZM − leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 PDTC143ZS − plastic single-ended leaded (through hole) package; 3 leads SOT54 PDTC143ZT − plastic surface mounted package; 3 leads SOT23 PDTC143ZU − plastic surface mounted package; 3 leads SOT323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage positive − +30 V negative −−5V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT883 notes 2 and 3 − 250 mW SOT416 note 1 − 150 mW SOT490 notes 1 and 2 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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