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MSI2021 데이터시트(PDF) 3 Page - MagnaChip Semiconductor.

부품명 MSI2021
상세설명  0.4(ohm) Dual SPDT Analog Switch with Negative Swing Feature
PDF  11 Pages
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제조업체  MGCHIP [MagnaChip Semiconductor.]
홈페이지  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MSI2021 데이터시트(HTML) 3 Page - MagnaChip Semiconductor.

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June. 2009. Revision 1.3
MagnaChip Semiconductor Ltd.
3
Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
VDD
DC Supply Voltage on VDD pin
-0.5
5.5
V
VSAB
Control Input Voltage (SA, SB)
-0.5
VDD+0.3V
V
VIN/OUT
In/Out Voltage in Analog IO pins
A0, A1, B0, B1
VDD-4.3
VDD+0.3
V
IIN/OUT
In/Out Current in Analog IO pins
350
mA
IIN/OUT_PEAK
Peak Current in Analog IO pins (1ms Duration @10% Duty Cycle)
500
mA
ESD
HBM on All Pins
8
kV
TS
Storage Temperature
-65
150
°
C
Note 1:
Stresses beyond the above listed maximum ratings may damage the device permanently. Operating above the recommended
conditions for extended time may stress the device and affect device reliability. Also the device may not operate normally above the
recommended operating conditions. These are stress ratings only.
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
VDD
Supply Voltage
1.65
4.3
V
VSAB
Control Input Voltage (SA, SB)
0
VDD
V
VIN/OUT
In/Out Voltage in Analog IO Voltage
VDD-4.3
VDD
V
TA
Operating Temperature
-40
85
°C
DC Electrical Characteristics
All listed typical values are tested at TA=25°C unless otherwise specified.
Symbol
Parameter
Test Conditions
VDD(V)
Min
Typ
Max
Unit
VSAB_H
Control Input High Voltage
1.65 ≤ VDD < 2.3V
1.65
0.9
V
2.3 ≤ VDD < 2.8V
2.6
1.4
2.8 ≤ VDD < 3.7V
3.3
1.5
VDD = 4.3V
4.3
1.7
VSAB_L
Control Input Low Voltage
1.65 ≤ VDD < 2.8V
1.65
0.4
V
2.8 ≤ VDD < 3.7V
3.3
0.5
VDD=4.3V
4.3
0.6
ISAB
Control Input Leakage Current
VSAB = 0 and VDD
4.3
-1
1
μA
ICC
Quiescent Supply Current
VDD=4.3V, VSAB=0 or VDD,
IIN/OUT=0A
4.3
1.0
μA
ICCT
Increase in ICC on VDD pin per
Control Voltage
VSAB=2.6V
4.3
4
10.0
μA
VSAB=1.8V
4.3
12
30
ILEAK_OFF
OFF State Leakage Current on
A* & B* (See Figure 1)
0.3 < VIN/OUT ≤ VDD – 0.3
4.3
-2
2
μA
ILEAK_ON
ON State Leakage Current on
COMA & COMB (See Figure 1)
0.3 < VIN/OUT ≤ VDD – 0.3
4.3
-2
2
μA
IOFF
Power OFF Leakage Current on
COMA & COMB (See Figure 1)
VIN/OUT = 4.3V
0
±
45
μA
RON
On-Resistance (See Figure 2)
VIN/OUT = VDD-4.3V, 0.7 and VDD,
IIN/OUT = 100mA
1.65
1.0
Ω
3.0
0.4
4.3
0.3
RON
On-Resistance Match Between
Channels (Note 1)
VIN/OUT = 0.7V, IIN/OUT = 100mA
1.65
1.0
Ω
3.0
0.06
4.3
0.04
RFLAT_ON
RON Flatness (Note 2)
VIN/OUT = VDD-4.3V, and 0.7V,
IIN/OUT = 100mA
1.65
0.6
Ω
3.0
0.3
4.3
0.2
Note 1: ᅀ
RON(MAX) = | RON_MAX(A0, A1, B0, or B1)-RON_MIN(A0, A1, B0, or B1) | @ Same TA, input voltage, and Supply voltage.
Note 2:
RFLAT_ON is defined as the difference between the maximum and minimum value of RON measured over specified VIN/OUT range.



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