LCP12 datasheet(3/10 Pages) STMICROELECTRONICS

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DocID17500 Rev 4

3/10

LCP12

Characteristics

Figure 3. Pulse waveform

100

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

150

°C/W

Table 4. Parameters related to the negative suppressor

Symbol

Parameter

Test conditions

Min.

Max.

Unit

IGn

Negative gate trigger current

VGn/GND = -60 V

Measured at 50 Hz

5mA

IH-

Holding current (see Figure 4)VGn = -60 V

150

VDGL-

Dynamic switching voltage Gn / TIP or

RING(1)

VGn/GND = -60 V

10/700 µs

1.2/50 µs

2 kV

Rs = 25 Ω

IPP = 30 A

VGnT

Gn to TIP voltage

IGn = 20 mA

0.7

1.7

The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.

Table 5. Parameters related to the positive suppressor

Symbol

Parameter

Test conditions

Min. Max. Unit

IGp

Positive gate trigger current

VGp/GND = 60 V, measured at 50 Hz

VDGL+

Dynamic switching voltage Gp / TIP or

RING(1)

VGp/GND = 60 V

10/700 µs

1.2/50 µs

2 kV

Rs = 25 Ω

IPP = 30 A

VGpR

GP to RING voltage

IGp = -20 mA

The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.

Table 6. Parameters related to TIP or RING / GND

Symbol

Parameter

Test conditions

Min.

Max.

Unit

Reverse leakage current

VTIP or RING = +120 V

VTIP or RING = -120 V

VGp/TIP or RING= +1 V

VGn/TIP or RING= -1 V

µA

Capacitance TIP or RING / GND

VR = -3 V, F =1 MHz, VGp = 60 V, VGn = -60 V

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