| 전자부품 데이터시트 검색엔진 |
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BAS316 데이터시트(PDF) 2 Page - Weitron Technology |
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BAS316 데이터시트(HTML) 2 Page - Weitron Technology |
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2 / 3 page ![]() 1 0 2 300 200 100 0 V F ( V ) Fig.2 Forward current as a function of forward voltage. (1) T j= 150 °C; typical values. (2)T j =25°C; typical values. (3) T j =25°C; maximum values. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents; T j =25°C prior to surge. t P ( µs ) 10 2 10 1 10 -1 1 1 1 0 02 103 104 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage 100 V V R continuous reverse voltage – 75 V I F continuous forward current – 250 mA I FRM repetitive peak forward current – 500 mA I FSM non-repetitivepeakforwardcurrent square wave; T j=25°C prior to surge; see Fig.3 t =1µs – 5 A t =1 ms – 1 A t =1 s – 0.5 A P tot total power dissipation – 200 mW T stg storage temperature -55 +150 °C T j junction temperature – 150 °C – TEMPERATURE (°C) 25 0 100 40 20 0 50 75 100 125 150 80 60 Fig.1 Steady State Power Derating V R(RMS) 53 V RMS reverse voltage – thermal resistance junction to ambient air R JA C/W – 625 BAS316 S-BAS316 http://www.weitron.com.tw WEITRON 2 /3 03-Jul-2015 |
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