BUX22 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 200 V

ICEX

Collector Cut-off

Current

VCE = 300 V

VBE = -1.5V

Tcase = 125

VCE = 300 V

VBE = -1.5V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

250

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 50 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 10 A

IB = 1 A

IC = 20 A

IB = 2.5 A

0.2

0.32

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 20 A

IB = 2.5 A

1.1

1.5

hFE

∗

DC Current Gain

IC = 10 A

VCE = 4 V

IC = 20 A

VCE = 4 V

IS/b

Second Breakdown

Collector Current

VCE = 140 V

t = 1 s

VCE = 20 V

t = 1 s

0.15

17.5

Transistor Frequency

VCE = 15 V

IC = 2 A

f = 10 MHz

MHz

ton

Turn-on Time

IC = 20 A

IB1 = 2.5 A

VCC = 100 V

0.22

1.3

µs

Storage Time

Fall Time

IC = 20 A

IB1 = 2.5 A

IB2 = - 2.5 A

VCC = 100V

1.5

0.17

0.5

µs

Clamped Es/b

Collector Current

Vclamp= 250 V

L = 500

µH

∗ Pulsed: Pulse duration = 300µs, duty cycle

≤ 2 %

BUX22

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