2SC5886 datasheet(1/5 Pages) TOSHIBA

부품명	2SC5886

상세설명	High-Speed Swtching Applications

PDF	5 Pages

Scroll/Zoom	100%

제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 5 page

2SC5886

2002-08-21

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5886

High-Speed Swtching Applications

DC-DC Converter Applications

· High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)

· Low collector-emitter saturation: VCE (sat) = 0.22 V (max)

· High-speed switching: tf = 55 ns (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

100

V

VCEX

80

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

7

V

DC

IC

5

Collector current

Pulse

ICP

10

A

Base current

IB

0.5

A

Ta

= 25°C

1

Collector power

dissipation

Tc

= 25°C

Pc

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

-55 to 150

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0

¾

100

nA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

¾

100

nA

Collector-emitter brakedown voltage

V (BR) CEO

IC = 10 mA, IB = 0

50

¾

V

hFE (1)

VCE = 2 V, IC = 0.5 A

400

¾

1000

DC current gain

hFE (2)

VCE = 2 V, IC = 1.6 A

200

¾

Collector-emitter saturation voltage

VCE (sat)

IC = 1.6 A, IB = 32 mA

¾

0.22

V

Base-emitter saturation voltage

VBE (sat)

IC = 1.6 A, IB = 32 mA

¾

1.10

V

Rise time

tr

¾

63

¾

Storage time

tstg

¾

560

¾

Switching time

Fall time

tf

See Figure 1 circuit diagram

VCC ~- 24 V, RL = 15 W

IB1 = 32 mA, IB2 = -53 mA

¾

55

¾

ns

Unit: mm

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

유사한 부품 번호 - 2SC5886

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC5886	1Mb / 73P	Bipolar Small-Signal Transistors
	2SC5886	176Kb / 5P	High-Speed Swtching Applications DC-DC Converter Applications 2010-02-05
	2SC5886A	139Kb / 5P	High-Speed Switching Applications
	2SC5886A	1Mb / 73P	Bipolar Small-Signal Transistors
Inchange Semiconductor ...	2SC5886A	290Kb / 2P	isc Silicon NPN Power Transistor

More results

유사한 설명 - 2SC5886

제조업체	부품명	데이터시트	상세설명
Sanyo Semicon Device	2SB1127	89Kb / 3P	20V/5A Swtching Applications
Toshiba Semiconductor	2SA2097	123Kb / 5P	High-Speed Swtching Applications DC-DC Converter Applications
	2SC5886	141Kb / 5P	Silicon NPN Epitaxial Type High-Speed Swtching Applications 10-Nov-2006
	2SA2097	153Kb / 5P	High-Speed Swtching Applications DC-DC Converter Applications
Isahaya Electronics Cor...	INK0310AP1	124Kb / 5P	High Speed Swtching Silicon N-channel MOSFET
Inchange Semiconductor ...	IRF220	48Kb / 2P	High Speed Applications
	IRF221	48Kb / 2P	High Speed Applications
	IRF223	48Kb / 2P	High Speed Applications
	IRF224	48Kb / 2P	High Speed Applications
	IRF225	48Kb / 2P	High Speed Applications

More results

2SC5886 데이터시트(PDF) 1 Page - Toshiba Semiconductor

2SC5886 데이터시트(HTML) 1 Page - Toshiba Semiconductor

유사한 부품 번호 - 2SC5886

유사한 설명 - 2SC5886

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL