| 전자부품 데이터시트 검색엔진 |
|
ESDA6V1-5P6 데이터시트(PDF) 2 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ESDA6V1-5P6 데이터시트(HTML) 2 Page - STMicroelectronics |
|
2 / 5 page ![]() ESDA6V1-5P6 2/5 Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage tempature coefficient VF Forward voltage drop C Capacitance per line Rd Dynamic resistance ELECTRICAL CHARACTERISTICS (Tamb = 25°C) V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd Symbol Parameter Test conditions Value Unit VPP ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ±15 ±8 kV PPP Peak pulse power (8/20 µs) (see note 1) Tj initial = Tamb 150 W Tj Junction temperature 125 °C Tstg Storage temperature range -55to+150 °C TL Maximum lead temperature for soldering during 10s at 5mm for case 260 °C Top Operating temperature range -40to+150 °C Note 1: for a surge greater than the maximum values , the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Types VBR @IR IRM @VRM Rd αTC min. max. max. typ. max. typ. @0V VV mA µAV Ω 10 -4/°C pF ESDA6V1-5P6 6.1 7.2 1 0.5 3 1.5 4.5 70 Symbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 220 °C/W THERMAL RESISTANCES |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |