| 전자부품 데이터시트 검색엔진 |
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LF451 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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LF451 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
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3 / 8 page ![]() Note 7 Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level) Note 8 Design limits are guaranteed to National’s AOQL but not 100% tested Note 9 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature TJ Due to limited production test time the input bias currents are correlated to junction temperature In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation PD TJ e TA a iJAPD where iJA is the thermal resistance from junction to ambient Note 10 VOS IB AVOL and IOS are measured at VCM e 0V Note 11 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice Typical Performance Characteristics Distortion vs Frequency Voltage Swing Undistorted Output Response Open Loop Frequency Rejection Ratio Common-Mode Rejection Ratio Power Supply Noise Voltage Equivalent Input Gain (VV) Open Loop Voltage Output Impedance Inverter Settling Time TLH9660 – 5 3 |
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