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MP6759 데이터시트(PDF) 4 Page - Toshiba Semiconductor

부품명 MP6759
상세설명  TOSHIBA GTR Module Silicon N Channel IGBT
PDF  6 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP6759 데이터시트(HTML) 4 Page - Toshiba Semiconductor

  MP6759 Datasheet HTML 1Page - Toshiba Semiconductor MP6759 Datasheet HTML 2Page - Toshiba Semiconductor MP6759 Datasheet HTML 3Page - Toshiba Semiconductor MP6759 Datasheet HTML 4Page - Toshiba Semiconductor MP6759 Datasheet HTML 5Page - Toshiba Semiconductor MP6759 Datasheet HTML 6Page - Toshiba Semiconductor  
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MP6759
2002-11-20
4
Collector-emitter voltage VCE (V)
C – VCE
Collector current IC (A)
Gate resistance RG (Ω)
Switching Time – RG
Forward current IF (A)
trr, Irr – IF
Forward voltage VF (V)
IF – VF
Charge QG (nQ)
VCE, VGE – QG
5
0.5
Cies
Coes
Cres
Common emitter
VGE = 0 V
f = 1 MHz
Tc = 25°C
1
3
10
30
100
300
1000
10
30
100
300
1000
3000
0.1
0
Irr
trr
Common cathode
di/dt = 100 A/µs
VGE = −10 V
Tc = 25°C
0.3
0.5
1
3
5
10
4
8
12
16
0
Common cathode
VGE = 0 V
0
Tc = 125°C
25
−40
0.4
0.8
1.2
1.6
2.0
4
8
12
16
20
100
0.03
1
0.05
0.1
0.3
0.5
1
3
5
10
30
50
Common emitter
VCC = 300 V
VGE = ±15 V
RG = 100 Ω
Tc = 25°C
ton
tr
toff
tf
0.02
0
0
VCE = 0 V
100
200
8
16
24
32
40
4
8
12
16
20
Common emitter
RL = 30 Ω
Tc = 25°C
300
Switching Time – IC
0.1
10
30
50
100
300
500
1000
0.3
0.5
1
3
5
Common emitter
VCC = 300 V
VGE = ±15 V
IC = 10 A
Tc = 25°C
ton
tr
toff
tf



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