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Apr. 2017. Rev. 3.0

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SW150N06A

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

150*

A

Continuous drain current (@T

94.5*

A

I

DM

Drain current pulsed

(note 1)

600

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

1125

mJ

E

AR

Repetitive avalanche energy

(note 1)

145

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

251.8

W

2.0

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.5

R

thja

Thermal resistance, Junction to ambient

52.6

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-220

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 150N06A

SW150N06A

TO-220

TUBE

1

2

3

N-channel Enhanced mode TO-220 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 115nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

DC-DC converter, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 150A

R

1

2

3