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SW4N60DA 데이터시트(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

부품명 SW4N60DA
상세설명  N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET
PDF  7 Pages
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제조업체  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
홈페이지  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4N60DA 데이터시트(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
2/7
SW4N60DA
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
600
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
0.42
V/oC
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
1
uA
VDS=480V, TC=125oC
50
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.5
4.5
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=1.5A
3.35
3.65
Ω
Gfs
Forward transconductance
VDS=30V, ID=2A
3
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=25V, f=1MHz
442
pF
Coss
Output capacitance
52
Crss
Reverse transfer capacitance
14
td(on)
Turn on delay time
VDS=300V, ID=4A, RG=25Ω
(note 4,5)
9
ns
t
r
Rising time
21
td(off)
Turn off delay time
19
tf
Fall time
21
Qg
Total gate charge
VDS=480V, VGS=10V, ID=4A
(note 4,5)
9.6
nC
Qgs
Gate-source charge
2.2
Qgd
Gate-drain charge
3.4
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4
A
ISM
Pulsed source current
16
A
VSD
Diode forward voltage drop.
IS=4A, VGS=0V
1.4
V
trr
Reverse recovery time
IS=4A, VGS=0V,
dIF/dt=100A/us
353
ns
Qrr
Reverse recovery charge
1.8
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 85.6mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.



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