SW200R10VT datasheet(1/7 Pages) SEMIPOWER

부품명	SW200R10VT

상세설명	N-channel Enhanced mode TO-252/TO-251/SOP-8 MOSFET

PDF	7 Pages

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제조업체	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

홈페이지	http://www.samwinsemi.com

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1 / 7 page

May. 2017. Rev. 3.0

1/7

SW200R10VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252

TO-251

SOP-8

V

DSS

Drain to source voltage

100

V

I

D

Continuous drain current (@T

C=25

oC)

36*

A

Continuous drain current (@T

C=100

oC)

23*

A

I

DM

Drain current pulsed

(note 1)

144

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

72

mJ

E

AR

Repetitive avalanche energy

(note 1)

11

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

117

160

W

Total power dissipation (@T

A=25

oC)

2.9

W

Derating factor above 25oC

0.9

1.3

0.02

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-252

TO-251

SOP-8

R

thjc

Thermal resistance, Junction to case

1.07

0.78

oC/W

R

thja

Thermal resistance, Junction to ambient

73

43

oC/W

*. Drain current is limited by junction temperature.

TO-252/TO-251：1. Gate 2. Drain 3. Source

SOP-8: 4.Gate 5,6,7,8.Drain 1,2,3.Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 200R10VT

SW200R10VT

TO-252

REEL

2

SW I 200R10VT

SW200R10VT

TO-251

TUBE

3

SW K 200R10VT

SW200R10VT

SOP-8

REEL

N-channel Enhanced mode TO-252/TO-251/SOP-8 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 19.5mΩ)@VGS=4.5V

(Typ 18.7m

Ω)@V

GS=10V

 Low Gate Charge (Typ 86nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Synchronous Rectification,

Li Battery Protect Board, Inverter.

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 100V

I

D

: 36A

R

DS(ON) : 19.5mΩ@VGS=4.5V

18.7m

Ω@V

GS=10V

G

D

S

TO-252

1

2

3

TO-251

1

2

3

SOP-8

G(4) D(5,6,7,8)

S(1,2,3)

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user's

board design.

SOP-8 R

thja : 43

oC/W on a 1 in2 pad of 2oz copper.

D

G

S

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