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ACE1060B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD.

부품명 ACE1060B
상세설명  N-Channel Super Trench Power MOSFET
PDF  6 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

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ACE1060B
N-Channel Super Trench Power MOSFET
VER 1.2
1
Description
ACE1060B uses Super Trench technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and
synchronous rectification.
Features
VDS=100V, ID=60A
RDS(ON)1@VGS=10V, TYP 7.2mΩ
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25℃
ID
60
A
TA=100℃
52
Drain Current (Pulsed)*B
IDM
240
A
Power Dissipation
TA=25℃
PD
105
W
Operating temperature / storage temperature
TJ/TSTG
-55~150
℃
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP
Ordering information
ACE1060B XX + H
PN: DFN5*6-EP
Pb - free
Halogen - free


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