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ACE2420B 데이터시트(PDF) 2 Page - ACE Technology Co., LTD.

부품명 ACE2420B
상세설명  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE2420B 데이터시트(HTML) 2 Page - ACE Technology Co., LTD.

  ACE2420B Datasheet HTML 1Page - ACE Technology Co., LTD. ACE2420B Datasheet HTML 2Page - ACE Technology Co., LTD. ACE2420B Datasheet HTML 3Page - ACE Technology Co., LTD. ACE2420B Datasheet HTML 4Page - ACE Technology Co., LTD. ACE2420B Datasheet HTML 5Page - ACE Technology Co., LTD. ACE2420B Datasheet HTML 6Page - ACE Technology Co., LTD.  
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ACE2420B
N-Channel Enhancement Mode Power MOSFET
VER 1.1
2
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250μA
200
V
Zero Gate Voltage Drain Current
IDSS1
VDS = 200V, VGS = 0V
1
μA
Gate Threshold Voltage
VGS(TH)
VGS = VDS , IDS= 250μA
1
1.5
2.5
V
Gate Leakage Current
IGSS
VGS= ±20V , VDS=0V
±100
nA
Drain-Source On-state
Resistance
RDS(on)
VGS = 10V , ID= 15A
62
80
mΩ
Forward Trans Conductance
gFS
VDS= 10V , ID= 15A
30
S
Diode Forward Voltage
VSD
ISD= 15A , VGS= 0V
1.2
V
Diode Forward Current
IS
24
A
Switching
Total Gate Charge
Qg
VDS= 100V, ID= 15A,
VGS= 10V
60
nC
Gate-Source Charge
Qgs
19
nC
Gate-Drain Charge
Qgd
17
nC
Turn-on Delay Time
td( on )
VDD=100V,ID= 15A,
VGS= 10V,RG= 2.5Ω
10
ns
Turn-on Rise Time
tr
18
ns
Turn-off Delay Time
td( off )
22
ns
Turn-off Fall Time
tf
5
ns
Dynamic
Input Capacitance
Ciss
VDS=25V,VGS= 0V,
f= 1.0MHz
4200
pF
Output Capacitance
Coss
163
pF
Reverse Transfer Capacitance
Crss
75
pF



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