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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ACE6604B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE6604B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 5 page  ACE6604B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ACE6604B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS= 60V , ID=85A RDS(ON)@ VGS = 10V , TYP= 4.6 mΩ RDS(ON)@ VGS = 4.5V , TYP= 5.3 mΩ Absolute Maximum Ratings@TA=25℃ unless otherwise noted Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 85 A TA=100℃ 54 Drain Current (Pulsed)*B IDM 340 A Power Dissipation TA=25℃ PD 135 W Operating temperature / Storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJAis measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type DFN5*6-EP |
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