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SS22F 데이터시트(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SS22F 데이터시트(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 3 page ![]() Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 2.0 -55 ~ +150 A A V mA pF °C Units Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 2 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS22F SS24F SS26F SS28F SS210F SS212F SS215F SS220F PINNING PIN 1 2 DESCRIPTION Cathode Anode Simplified outline SMAF and symbol VRRM VRMS VDC IF(AV) IFSM VF Cj Tj Symbols Tstg Storage Temperature Range 60 42 60 80 56 80 100 100 0.55 0.70 0.85 160 -55 ~ +150 °C 120 120 150 105 150 200 140 200 0.95 80 40 50 70 84 Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • 27mg / 0.00095oz Approx. Weight: Top View Marking Code: SS22 — SS220 0.5 5 T = 25 °C a T =100 °C a IR 0.3 3 1 2 80 Typical Thermal Resistance °C/W RθJA Page 1 of 3 SS22F THRU SS220F (1) (2) Measured at 1 MHz and applied reverse voltage of 4 V D.C (2) (1) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 |
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