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SW7N65DW

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

7*

A

Continuous drain current (@T

4.4*

A

I

DM

Drain current pulsed

(note 1)

28

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

151

mJ

E

AR

Repetitive avalanche energy

(note 1)

14

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

179

W

1.4

T

Operating junction temperature & storage temperature

-55 ~ + 150

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.7

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW B 7N65DW

SW7N65DW

TO-263

TUBE

N-channel Enhanced mode TO-263 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 34nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED , Charge, PC Power

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 7A

R

1

2

3

TO-263

1

2

3

Jan. 2017. Rev. 3.0

1/6