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Jun. 2015. Rev. 1.0

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SW9N10V

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

100

V

I

D

Continuous drain current (@T

9*

A

Continuous drain current (@T

5.7*

A

I

DM

Drain current pulsed

(note 1)

36

A

V

GS

Gate to source voltage

± 16

V

E

AS

Single pulsed avalanche energy

(note 2)

64

mJ

E

AR

Repetitive avalanche energy

(note 1)

7

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

44

W

0.35

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

2.84

R

thja

Thermal resistance, Junction to ambient

62.5

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 9N10V

SW9N10V

TO-252

REEL

N-channel Enhanced mode TO-252 MOSFET

Features

 High ruggedness

 Low R

(Typ 96m

Ω)@V

 Low Gate Charge (Typ 22nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Synchronous Rectification, DC-DC

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

BV

I

D

: 9A

R

96m

Ω@VGS=4.5V

1

2

3

TO-252

1

2

3