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ALD810021 데이터시트(PDF) 7 Page - Advanced Linear Devices

부품명 ALD810021
상세설명  SUPERCAPACITOR AUTO BALANCING (SAB) MOSFET ARRAYS
PDF  17 Pages
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제조업체  ALD [Advanced Linear Devices]
홈페이지  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

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ALD8100XX/ALD9100XX SUPERCAPACITOR
Advanced Linear Devices, Inc.
7 of 17
AUTO BALANCING (SAB) MOSFET ARRAY FAMILY
TABLE 2. ALD 9100XX SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFETS
EQUIVALENT ON RESISTANCE AT DIFFERENT INPUT VOLTAGES
AND OUTPUT CURRENTS
Gate-
OUTPUT CURRENT
ALD Part
Threshold
VIN (V) 2
IOUT =IDS(ON) (µA) 1
TA = 25
°C
Number
Voltage
Equivalent ON
Vt (V)
Resistance (M
Ω) 0.0001
0.001
0.01
0.1
1
10
100
300
1000
3000
10000
ALD910028
2.80
VIN (V)
2.40
2.50
2.60
2.70
2.80
2.90
3.02
3.10
3.24
3.30
3.80
RDS(ON) (MΩ)
24000
2500
260
27
2.8
0.29
0.030
0.01
0.003
0.001
0.0004
ALD910027
2.70
VIN (V)
2.30
2.40
2.50
2.60
2.70
2.80
2.92
3.00
3.14
3.20
3.70
RDS(ON) (MΩ)
23000
2400
250
26
2.7
0.28
0.029
0.01
0.003
0.001
0.0004
ALD910026
2.60
VIN (V)
2.20
2.30
2.40
2.50
2.60
2.70
2.82
2.90
3.04
3.10
3.60
RDS(ON) (MΩ)
22000
2300
240
25
2.6
0.27
0.028
0.01
0.003
0.001
0.0004
ALD910025
2.50
VIN (V)
2.10
2.20
2.30
2.40
2.50
2.60
2.72
2.80
2.94
3.00
3.50
RDS(ON) (MΩ)
21000
2200
230
24
2.5
0.26
0.027
0.01
0.003
0.001
0.0004
ALD910024
2.40
VIN (V)
2.00
2.10
2.20
2.30
2.40
2.50
2.62
2.70
2.84
2.90
3.40
RDS(ON) (MΩ)
20000
2100
220
23
2.4
0.25
0.026
0.009
0.003
0.001
0.0003
ALD910023
2.30
VIN (V)
1.90
2.00
2.10
2.20
2.30
2.40
2.52
2.60
2.74
2.80
3.30
RDS(ON) (MΩ)
19000
2000
210
22
2.3
0.24
0.025
0.009
0.003
0.001
0.0003
ALD910022
2.20
VIN (V)
1.80
1.90
2.00
2.10
2.20
2.30
2.42
2.50
2.64
2.70
3.20
RDS(ON) (MΩ)
18000
1900
200
21
2.2
0.23
0.024
0.008
0.003
0.001
0.0003
ALD910021
2.10
VIN (V)
1.70
1.80
1.90
2.00
2.10
2.20
2.32
2.40
2.54
2.60
3.10
RDS(ON) (MΩ)
17000
1800
190
20
2.1
0.22
0.023
0.008
0.003
0.001
0.0003
ALD910020
2.00
VIN (V)
1.60
1.70
1.80
1.90
2.00
2.10
2.22
2.30
2.44
2.50
3.00
RDS(ON) (MΩ)
16000
1700
180
19
2.0
0.21
0.022
0.008
0.002
0.001
0.0003
ALD910019
1.90
VIN (V)
1.50
1.60
1.70
1.80
1.90
2.00
2.12
2.20
2.34
2.40
2.90
RDS(ON) (MΩ)
15000
1600
170
18
1.9
0.20
0.021
0.007
0.002
0.001
0.0003
ALD910018
1.80
VIN (V)
1.40
1.50
1.60
1.70
1.80
1.90
2.02
2.10
2.24
2.30
2.80
RDS(ON) (MΩ)
14000
1500
160
17
1.8
0.19
0.020
0.007
0.002
0.001
0.0003
ALD910017
1.70
VIN (V)
1.30
1.40
1.50
1.60
1.70
1.80
1.92
2.00
2.14
2.20
2.70
RDS(ON) (MΩ)
13000
1400
150
16
1.7
0.18
0.019
0.007
0.002
0.001
0.0003
ALD910016
1.60
VIN (V)
1.20
1.30
1.40
1.50
1.60
1.70
1.82
1.90
2.04
2.10
2.60
RDS(ON) (MΩ)
12000
1300
140
15
1.6
0.17
0.018
0.007
0.002
0.001
0.0003
Notes: 1) The SAB MOSFET Output Current (IOUT) = Drain Source ON Current (IDS(ON)) and is the maximum current available to
offset the supercapacitor leakage current.
2) The Input Voltage (VIN) = Drain Gate Source Voltage (VGS = VDS) and is normally the same as the voltage across the
supercapacitor.
Selection of an SAB MOSFET device depends on a set of desired voltage vs. current characteristics that closely match the supercapacitor
operating VIN voltage and IOUT currents that provide the best leakage and regulation profile of a supercapacitor load. The table lists VIN
which corresponds to different supercapacitor load voltages. At each VIN = VGS = VDS bias voltage, a corresponding IOUT, Drain Source
ON Current, IDS(ON), is produced by a specific SAB MOSFET, which is equal to the amount of current available to compensate for
supercapacitor leakage current inbalances. This current results in an Equivalent ON Resistance RDS(ON) across a supercapacitor cell.
Selection of an SAB MOSFET part number operating at maximum supercapacitor operating voltage at an IOUT that corresponds to the
maximum supercapacitor leakage current offer the best possible tradeoff between leakage current balancing and voltage regulation.



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