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TSZ182 데이터시트(PDF) 10 Page - STMicroelectronics |
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TSZ182 데이터시트(HTML) 10 Page - STMicroelectronics |
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10 / 39 page ![]() Electrical characteristics TSZ182 10/39 DocID029836 Rev 1 Symbol Parameter Conditions Min. Typ. Max. Unit GBP Gain bandwidth product T = 25 °C, RL = 10 kΩ, CL = 100 pF 2 3 MHz -40 °C < T< 125 °C, RL = 10 kΩ, CL = 100 pF 1.6 Φm Phase margin RL = 10 kΩ, CL = 100 pF 56 degrees Gm Gain margin 15 dB SR Slew rate (4) T = 25 °C 2.9 4.7 V/µs -40 °C < T< 125 °C 2.4 ts Settling time To 0.1 %, Vin = 1.5 Vpp 600 ns To 0.01 %, Vin = 1 Vpp 4 µs en Equivalent input noise voltage f = 1 kHz 37 nV/√Hz f = 10 kHz 37 en-pp Voltage noise f = 0.1 to 10 Hz 0.4 µVpp Cs Channel separation f = 100 Hz 135 dB tinit Initialization time, G = 100 (5) T = 25 °C 60 µs -40 °C < T< 125 °C 100 Notes: (1)See Section 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature. (2)Guaranteed by design (3)Tested on the MiniSO8 package, RF injection on the IN- pin (4)Slew rate value is calculated as the average between positive and negative slew rates (5)Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage stabilization |
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