ESD7331MUT5G datasheet(2/5 Pages) ONSEMI

2 / 5 page

Bi−Directional TVS

IPP

VRWM

VC VBR

VRWM

VBR

ESD7331

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

3.3

Breakdown Voltage (Note 2)

VBR

IT = 1 mA

4.0

Reverse Leakage Current

VRWM = 3.3 V

1.0

Clamping Voltage (Note 3)

IPP = 1 A

7.5

ESD Clamping Voltage

Per IEC61000−4−2

See Figures 1 and 2

Junction Capacitance

VR = 0 V, f = 1 MHz

0.4

0.75

Dynamic Resistance

RDYN

TLP Pulse

0.26

Insertion Loss

f = 100 MHz

f = 8.5 GHz

0.003

1.79

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.

Figure 1. ESD Clamping Voltage Positive 8 kV

Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Negative 8 kV

Contact per IEC61000−4−2

TIME (ns)

−20

100

120

140

160

−20

100

120

140

TIME (ns)

−70

−60

−50

−40

−30

−20

−10

−20

100

120

140

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