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2SA2113 데이터시트(PDF) 1 Page - Rohm |
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2SA2113 데이터시트(HTML) 1 Page - Rohm |
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1 / 4 page ![]() 2SA2113 Transistor 1/3 Medium power transistor ( −30V, −2A) 2SA2113 ! ! ! !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1A, IB = −0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !Applications ! ! ! !External dimensions (Units : mm) TSMT3 2.8 1.6 0.3 0.6 Each lead has same dimensions Abbreviated symbol : UX (1)Base (2)Emitter (3)Collector Low frequency amplifier High speed switching ! ! ! !Structure PNP Silicon epitaxial planar transistor ! ! ! !Packaging specifications 2SA2113 TL 3000 Type Package Code Taping Basic ordering unit (pieces) ! ! ! !Absolute maximum ratings (Ta=25 °C) Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −30 −30 −6 −2 500 150 −55~+150 −4 ∗1 Unit V V V A A mW °C °C ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature |
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