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2SC5621 데이터시트(PDF) 1 Page - List of Unclassifed Manufacturers

부품명 2SC5621
상세설명  FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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2SC5621 데이터시트(HTML) 1 Page - List of Unclassifed Manufacturers

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MARKING
G
W
TYPE NAME
hFE ITEM
2SC5621
〈SMALL-SIGNAL TRANSISTOR〉
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
FEATURE
APPLICATION
・Super mini package for easy mounting.
・High gain bandwidth product.
fT=4.5GHz
For TV tuners,high frequency amplifier,celluar phone
system.
・High gain,low noise.
・Can operate at low voltage.
2SC5621 is a super mini package resin sealed silicon NPN
epitaxial transistor.It is designed for high frequency
application.
OUTLINE DRAWING
Unit:mm
TERMINAL CONNECTOR
1
: BASE
2
: EMITTER
3
: COLLECTOR
EIJA:
MAXIMUM RATINGS (Ta=25℃)
VCBO
I C
PC
Tj
Tstg
20
50
+125
-55~+125
V
mA
mW
℃
℃
Symbol
Parameter
Collector to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
Unit
VEBO
V
Emitter to Base voltage
VCEO
12
V
Collector to Emitter voltage
100
3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
I CBO
f T
Cob
NF
VCB=10V, I E=0mA
VCE=5V, I E=20mA
VCB=5V, I E=0mA, f =1MHz
VCE=5V, I C=20mA, f =1GHz
VCE=5V, I C=5mA, f =1GHz
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
I EBO
VEB=1V, IC=0mA
Emitter cut off current
hFE
VCE=5V, I C=20mA
DC forward current gain
S21
2
Collector cut off current
1.0
1.0
50
250
4.5
1.0
7.5
9.0
1.5
μA
μA
GHz
pF
dB
dB
0.8
0.4
0.4
1.6
1
2
3


유사한 부품 번호 - 2SC5621

제조업체부품명데이터시트상세설명
logo
Isahaya Electronics Cor...		 2SC5621 ISAHAYA-2SC5621 Datasheet
132Kb / 5P		 SMALL-SIGNAL TRANSISTOR
2SC5621 ISAHAYA-2SC5621 Datasheet
188Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5621 ISAHAYA-2SC5621_13 Datasheet
188Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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유사한 설명 - 2SC5621

제조업체부품명데이터시트상세설명
logo
Isahaya Electronics Cor...		 2SC5636 ISAHAYA-2SC5636 Datasheet
88Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5634 ISAHAYA-2SC5634 Datasheet
95Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5635 ISAHAYA-2SC5635 Datasheet
95Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5726 ISAHAYA-2SC5726 Datasheet
46Kb / 2P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3053 ISAHAYA-2SC3053 Datasheet
319Kb / 5P		 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3053 ISAHAYA-2SC3053_10 Datasheet
247Kb / 6P		 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5477 ISAHAYA-2SC5477_10 Datasheet
166Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5619 ISAHAYA-2SC5619_13 Datasheet
157Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5621 ISAHAYA-2SC5621_13 Datasheet
188Kb / 4P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5633 ISAHAYA-2SC5633_09 Datasheet
133Kb / 2P		 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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