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D965SS 데이터시트(PDF) 1 Page - Unisonic Technologies

부품명 D965SS
상세설명  NPN EPITAXIAL SILICON TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

D965SS 데이터시트(HTML) 1 Page - Unisonic Technologies

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UTCD965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-016,B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
MARKING(D965SS)
MARKING(D965ASS)
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
D965SS
D965ASS
VCEO
20
30
V
Emitter-base voltage
VEBO
7
V
Collector dissipation(Ta=25
°C)
Pc
750
mW
Collector current
Ic
5
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BVCBO
Ic=100
µA,IE=0
40
V
Collector-emitter breakdown voltage
D965SS
D965ASS
BVCEO
Ic=1mA,IB=0
20
30
V
Emitter-base breakdown voltage
BVEBO
IE=10
µA,Ic=0
7
V
Collector cut-off current
ICBO
VCB=10V,IE=0
100
nA
Emitter cut-off current
IEBO
VEB=7V,Ic=0
100
nA
D65
D65A


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