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HFA75MB40C 데이터시트(PDF) 1 Page - International Rectifier |
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HFA75MB40C 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 5 page ![]() PD -2.475A Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Features Description HEXFREDTMdiodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Ultrafast, Soft Recovery Diode HEXFREDTM HFA75MB40C Absolute Maximum Ratings (per Leg) Note: Limited by junction temperature L = 100µH, duty cycle limited by max TJ A W °C/W K/W Thermal - Mechanical Characteristics -55 to +150 35 (4.0) 50 (5.7) COMMON CATHODE ANODE 2 ANODE 1 (1-3) (4-6) (7-9) (ISOLATED BASE) Parameter Max. Units VR Cathode-to-Anode Voltage 400 V IF @ TC = 25°C Continuous Forward Current 75 IF @ TC = 100°C Continuous Forward Current 36 IFSM Single Pulse Forward Current 300 IAS Maximum Single Pulse Avalanche Current 5.0 EAS Non-Repetitive Avalanche Energy 1.4 mJ PD @ TC = 25°C Maximum Power Dissipation 125 PD @ TC = 100°C Maximum Power Dissipation 50 TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Parameter Min. Typ. Max. Units RθJC Junction-to-Case, Single Leg Conducting 1.0 Junction-to-Case, Both Legs Conducting 0.50 RθCS Case-to-Sink, Flat, Greased Surface 0.10 Wt Weight 58 (2.0) g (oz) Mounting Torque lbfin (Nm) D-60 (MODIFIED T0-249AA) A 5/5/97 VR = 400V VF(typ.) = 1V IF(AV) = 75A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/µs 125°C |
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