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AD149 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AD149 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor AD149 DESCRIPTION · Wide Area of Safe Operation · DC Current Gain- : hFE=30-100@IC= -1A · Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)@ IC= -3A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general-purpose power switch and amplifier, consumer and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3.5 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ |
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