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BD132 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD132 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BD132 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 VCB= -40V; IE= 0,TC=150℃ -50 -10 nA μ A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 nA hFE-1 DC Current Gain IC= -0.5A; VCE= -12V 40 hFE-2 DC Current Gain IC= -2A; VCE= -1V 20 fT Current-Gain—Bandwidth Product IC= -0.25A; VCE= -5V 60 MHz |
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