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BD841 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD841 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD841 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) · High DC Current Gain · Low Saturation Voltage · Complement to Type BD842 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in television circuits and audio applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Peak 3.0 A PC Collector Power Dissipation @ Ta=25℃ 2 W Collector Power Dissipation @ TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.5 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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