L182 datasheet(1/2 Pages) IXYS

부품명	L182

상세설명	HiPerFRED Epitaxial Diode with soft recovery

PDF	2 Pages

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제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

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HiPerFREDTM Epitaxial Diode

with soft recovery

Features

q

International standard package

q

Planar passivated chips

q

Very short recovery time

q

Extremely low switching losses

q

Low I

RM-values

q

Soft recovery behaviour

q

Epoxy meets UL 94V-0

Applications

q

Antiparallel diode for high frequency

switching devices

q

Antisaturation diode

q

Snubber diode

q

Free wheeling diode in converters

and motor control circuits

q

Rectifiers in switch mode power

supplies (SMPS)

q

Inductive heating

q

Uninterruptible power supplies (UPS)

q

Ultrasonic cleaners and welders

Advantages

q

Avalanche voltage rated for reliable

operation

q

Soft reverse recovery for low

EMI/RFI

q

Low I

RM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating

switch

Dimensions see outlines.pdf

C

A

A = Anode, C = Cathode, TAB = Cathode

C

A

TO-220 AC

C (TAB)

Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %

y Pulse Width = 300

ms, Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

DSEP 8-06A

I

FAV

= 10 A

V

RRM = 600 V

t

rr

= 35 ns

V

RSM

V

RRM

Type

V

600

DSEP 8-06A

Symbol

Conditions

Maximum Ratings

I

FRMS

35

A

I

FAVM

T

C = 135°C; rectangular, d = 0.5

10

A

I

FSM

T

VJ = 45°C; tp = 10 ms (50 Hz), sine

50

A

E

AS

T

VJ = 25°C; non-repetitive

0.1

mJ

I

AS = 0.9 A; L = 180 µH

I

AR

V

A = 1.5·VR typ.; f = 10 kHz; repetitive

0.1

A

T

VJ

-55...+175

°C

T

VJM

175

°C

T

stg

-55...+150

°C

P

tot

T

C = 25°C

60

W

M

d

mounting torque

0.4...0.6

Nm

Weight

typical

2

g

Symbol

Conditions

Characteristic Values

typ.

max.

I

R

x

T

VJ = 25°C

V

R = VRRM

60

mA

T

VJ = 150°C VR = VRRM

0.25

mA

V

F

y

I

F = 10 A;

T

VJ = 150°C

1.42

V

T

VJ = 25°C

2.10

V

R

thJC

2.5

K/W

R

thCH

0.5

K/W

t

rr

I

F = 1 A; -di/dt = 50 A/

ms;

35

ns

V

R = 30 V; TVJ = 25°C

I

RM

V

R = 100 V;

I

F = 12 A; -diF/dt = 100 A/

ms4.4

A

T

VJ = 100°C

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L182 데이터시트(PDF) 1 Page - IXYS Corporation

L182 데이터시트(HTML) 1 Page - IXYS Corporation

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유사한 설명 - L182

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