| 전자부품 데이터시트 검색엔진 |
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FMD35N02 데이터시트(PDF) 2 Page - First Components International |
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FMD35N02 데이터시트(HTML) 2 Page - First Components International |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 25 - - V Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 30A 10.0 13 Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 30A 6.5 8.5 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 1 1.6 3 V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = +20V, VDS = 0V + 100 nA Gate Resistance Rg Forward Transconductance gfs VDS = 10V, ID = 35A S Dynamic Total Gate Charge Qg 24 Gate-Source Charge Qgs 5.4 Gate-Drain Charge Qgd 4.0 Turn-On Delay Time td(on) 15.0 Turn-On Rise Time tr 3.2 Turn-Off Delay Time td(off) 36 Turn-Off Fall Time tf 4.8 Input Capacitance Ciss 1940 Output Capacitance Coss 312 Reverse Transfer Capacitance Crss 122 Source-Drain Diode Max. Diode Forward Current IS 50 A Diode Forward Voltage VSD IS = 20A, VGS = 0V 0.87 1.5 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% nC VDS = 15V, VGS = 0V f = 1.0 MHz pF m Ω VDS = 15V, ID = 35A VGS = 10V VDD = 15V, RL = 15Ω Ι D = 1Α, VGEN = 10V RG = 24Ω ns FMD35N02 25V N-Channel Enhancement-Mode |
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