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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FMP05P30 데이터시트(PDF) 1 Page - First Components International |
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FMP05P30 데이터시트(HTML) 1 Page - First Components International |
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1 / 2 page  VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 59.4mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 88mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (T A = 25 oC unless otherwise noted) Symbol Limit Unit VDS -30 VGS + 20 ID -5.3 IDM -20 TA = 25 oC 2.5 TA = 75 oC TJ, Tstg -55 to 150 oC EAS mJ RθJC 30 Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 50 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board August '05 Rev 2 1 Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation P-Channel MOSFET oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Top View Internal Schematic Diagram TSOP-6 Gate Drain Source 1) 2) 2 FMP05P30 5.3A 30V P-Channel Enhancement-Mode MOSFET |
유사한 부품 번호 - FMP05P30 |
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유사한 설명 - FMP05P30 |
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