전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

IRF730 데이터시트(PDF) 2 Page - First Components International

부품명 IRF730
상세설명  6.0A 400V N CHANNEL POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  FCI [First Components International]
홈페이지  http://www.cotra.com.tw/
Logo FCI - First Components International

IRF730 데이터시트(HTML) 2 Page - First Components International

  IRF730 Datasheet HTML 1Page - First Components International IRF730 Datasheet HTML 2Page - First Components International IRF730 Datasheet HTML 3Page - First Components International  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
CIRF730
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
400
V
Drain-Source Leakage Current
(VDS = 400V, VGS = 0 V)
(VDS = 400V, VGS = 0 V, TJ = 125
)
IDSS
25
100
A
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
IGSSR
-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3A) (Note 4)
RDS(on)
1.0
Forward Transconductance (VDS = 50V, ID = 3 A) (Note 4)
gFS
2.9
mhos
Input Capacitance
Ciss
515
720
pF
Output Capacitance
Coss
185
260
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
15
30
pF
Turn-On Delay Time
td(on)
7
10
ns
Rise Time
tr
11
20
ns
Turn-Off Delay Time
td(off)
19
40
ns
Fall Time
(VDD = 200 V, ID = 6 A,
RG = 9.1 , VGS = 10 V) (Note 4)
tf
10
20
ns
Total Gate Charge
Qg
9.5
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
(VDS = 320V, ID = 6A
VGS = 10 V) (Note 4)
Qgd
3
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Qrr
1.6
µC
Forward Turn-On Time
ton
**
Reverse Recovery Time
IF = 6A, di/dt = 100A/µs , TJ = 25
(Note 4)
trr
270
ns
Diode Forward Voltage
IS = 6A, VGS = 0 V, TJ = 25
(Note 4)
VSD
1.5
V
Note
(1)
Repetitive rating; pulse width limited by max. junction temperature
(2)
VDD = 50V, starting TJ = 25
, L=24mH, RG = 25 , IAS = 4.5A
(3)
ISD
4.5A, di/dt
75A/µs, VDD
V(BR)DSS, TJ
150
(4)
Pulse Test: Pulse Width
300µs, Duty Cycle
2%
** Negligible, Dominated by circuit inductance
IRF730
6.0A 400V N CHANNEL POWER MOSFET



Html Pages

1 2 3


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com