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IRF730FP 데이터시트(PDF) 1 Page - First Components International |
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IRF730FP 데이터시트(HTML) 1 Page - First Components International |
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1 / 3 page ![]() GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current Continuous Pulsed (Note 1) ID IDM 6.0 21 A Gate-to-Source Voltage Continue VGS ±20 V Total Power Dissipation Derate above 25 PD 96 0.77 W W/ Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25 ) EAS 180 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Resistance Junction to Case Junction to Ambient JC JA 1.70 62 /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 IRF730FP 6.0A 400V N CHANNEL POWER MOSFET Mechanical Dimensions Description 1 3 2 G D S ITO-220 Dimension in mm |
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