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CSD18511KCS 데이터시트(PDF) 6 Page - Texas Instruments |
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CSD18511KCS 데이터시트(HTML) 6 Page - Texas Instruments |
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6 / 10 page ![]() TC - Case Temperature (qC) -50 -25 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs 10 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 1 10 100 D011 TC = 25q C TC = 125q C 6 CSD18511KCS SLPS548 – JULY 2017 www.ti.com Product Folder Links: CSD18511KCS Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) Single pulse, max RθJC = 0.8°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Max RθJC = 0.8°C/W Figure 12. Maximum Drain Current vs Temperature |
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