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2SC1213 데이터시트(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

부품명 2SC1213
상세설명  Silicon NPN transistor in a TO-92 Plastic Package
PDF  6 Pages
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제조업체  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
홈페이지  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC1213 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

  2SC1213 Datasheet HTML 1Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC1213 Datasheet HTML 2Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC1213 Datasheet HTML 3Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC1213 Datasheet HTML 4Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC1213 Datasheet HTML 5Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SC1213 Datasheet HTML 6Page - Foshan Blue Rocket Electronics Co.,Ltd.  
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2SC1213(A)
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
2SC1213
35
V
2SC1213A
50
Collector to Emitter Voltage
VCEO
2SC1213
35
V
2SC1213A
50
Emitter to Base Voltage
VEBO
4.0
V
Collector Current - Continuous
IC
500
mA
Collector Power Dissipation
PC
400
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base
Breakdown Voltage
VCBO
2SC1213
IC=10μA
IC=1.0mA
35
V
2SC1213A
50
Collector to Emitter
Breakdown Voltage
VCEO
2SC1213
IC=1.0mA
IB=0
35
V
2SC1213A
50
Emitter to Base
Breakdown Voltage
VEBO
IE=10μA
IC=0
4.0
V
Collector Cut-Off Current
ICBO
VCB=20V
IE=0
0.5
μA
DC Current Gain
hFE(1)
VCE=3.0V
IC=10mA
60
320
hFE(2)
VCE=3.0V
IC=500mA
10
Collector to Emitter
Saturation Voltage
VCE(sat)
IC=150mA
IB=15mA
0.2
0.6
V
Base to Emitter Voltage
VBE
VCE=3.0V
IC=10mA
0.64
V
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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