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2SC3779 데이터시트(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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2SC3779 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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2 / 6 page ![]() 2SC3779 Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current - Continuous IC 100 mA Base Current - Continuous IB 40 mA Collector Power Dissipation PC 600 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector Cut-Off Current ICBO VCB=12V IE=0 1.0 μA Emitter Cut-Off Current IEBO VEB=2.0V IC=0 10 μA DC Current Gain hFE VCE=10V IC=20mA 40 200 Transition Frequency fT VCE=10V IC=20mA 5.0 GHz Output Capacitance Cob VCB=10V f=1.0MHz 1.0 pF Reverse Transfer Capacitance Cre VCB=10V f=1.0MHz 0.7 pF Forward Transfer Gain |S21e|2 VCE=10V IC=20mA f=0.9GHz 8.5 10 dB Maximum Available Power Gain MAG VCE=10V IC=20mA f=0.9GHz 14 dB Noise Figure NF VCE=10V IC=5.0mA f=0.9GHz 1.5 3.0 dB 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) |
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