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2SA1010 데이터시트(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

부품명 2SA1010
상세설명  Silicon PNP transistor in a TO-220 Plastic Package.
PDF  6 Pages
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제조업체  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
홈페이지  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SA1010 데이터시트(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

  2SA1010 Datasheet HTML 1Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SA1010 Datasheet HTML 2Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SA1010 Datasheet HTML 3Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SA1010 Datasheet HTML 4Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SA1010 Datasheet HTML 5Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SA1010 Datasheet HTML 6Page - Foshan Blue Rocket Electronics Co.,Ltd.  
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2SA1010
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter to Base Voltage
VEBO
-7.0
V
Collector Current - Continuous
IC
-7.0
A
Peak Collector Current*
*ICM
-15
A
Base Current – Continuous
IB
-3.5
A
Collector Power Dissipation
PC
1.5
W
PC(TC=25 )
℃
40
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
*:pw(脉宽)≤300µs,duty cycle(占空比)≤10%.
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter Breakdown
Voltage
VCEO
IC=-10mA
IB=0
-100
V
Collector Cut-Off Current
ICBO
VCB=-100V
IE=0
-10
μA
Emitter Cut-Off Current
IEBO
VEB=-5.0V
IC=0
-10
μA
DC Current Gain
*hFE(1)
VCE=-5.0V
IC=-3.0A
40
200
*hFE(2)
VCE=-5.0V
IC=-0.5A
40
200
*hFE(3)
VCE=-5.0V
IC=-5.0A
20
Collector to Emitter Saturation
Voltage*
*VCE(sat)
IC=-5.0A
IB=-0.5A
-0.6
V
Base to Emitter Saturation
Voltage*
*VBE(sat)
IC=-5.0A
IB=-0.5A
-1.5
V
Turn-On Time
ton
IC=-5.0A
VCC=-50V
RL=10Ω
IB1=-IB2=-0.5A
0.5
μs
Storage Time
tstg
1.5
μs
Turn-Off Time
tf
0.5
μs
*:pw(脉宽)≤350µs,duty cycle(占空比)≤2%.
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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