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SN65MLVD201 데이터시트(PDF) 6 Page - Texas Instruments |
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SN65MLVD201 데이터시트(HTML) 6 Page - Texas Instruments |
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6 / 10 page ![]() SN65MLVD201, SN65MLVD203 SN65MLVD206, SN65MLVD207 SLLS558A – DECEMBER 2002 – JUNE 2003 www.ti.com 6 PARAMETER MEASUREMENT INFORMATION VAB or VYZ A/Y B/Z IA or IY VB or VZ VA or VY VOS VA + VB 2 VI D VCC VY + VZ 2 or IB or IZ II Figure 1. Driver Voltage and Current Definitions VAB or VYZ 49.9 Ω 3.32 k Ω 3.32 k Ω _ + –1 V ≤ Vtest ≤ 3.4 V A/Y B/Z D NOTE: All resistors are 1% tolerance. Figure 2. Differential Output Voltage Test Circuit VOS R1 24.9 Ω A/Y C3 2.5 pF VOS(PP) VOS(SS) VOS ≈ 1.3 V B/Z A/Y ≈ 0.7 V B/Z D R2 24.9 Ω C1 1 pF C2 1 pF NOTES:A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse frequency = 500 kHz, duty cycle = 50 ± 5%. B. C1, C2 and C3 include instrumentation and fixture capacitance within 2 cm of the D.U.T. and are ±20%. C. R1 and R2 are metal film, surface mount, ±1%, and located within 2 cm of the D.U.T. D. The measurement of VOS(PP) is made on test equipment with a –3 dB bandwidth of at least 1 GHz. Figure 3. Test Circuit and Definitions for the Driver Common-Mode Output Voltage VTest + – A/Y B/Z IOS 0 V or VCC –1 V or 3.4 V Figure 4. Driver Short-Circuit Test Circuit |
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