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STN444DN 데이터시트(PDF) 2 Page - Stanson Technology |
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STN444DN 데이터시트(HTML) 2 Page - Stanson Technology |
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2 / 8 page ![]() STN444DN N Channel Enhancement Mode MOSFET 100A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN444DN 2016 V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 35 20 A Pulsed Drain Current T=300us IDM 100 A Single Pulse Avalanche Current Single Pulse Avalanche Energy L=0.1mH IAS 20 A EAS 20 mJ Continuous Source Current (Diode Conduction) IS 35 A Power Dissipation TA=25℃ TC=70℃ PD 52 33 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Maximum Junction to Ambient T ≤ 10s RθJA 33 ℃ /W |
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