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DB151 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 DB151
상세설명  50V~1000 V, 1.5 A Surface Mount Bridge Rectifiers
PDF  2 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

DB151 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
DB151~DB157
50V~1000 V, 1.5 A
Surface Mount Bridge Rectifiers
09-Dec-2015 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
A
F
J
E
B
H
C
G
D
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Glass passivated chip
High surge forward current capability
APPLICATIONS
General purpose 1 phase Bridge rectifier applications
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameters
Symbol
DB
151
DB
152
DB
153
DB
154
DB
155
DB
156
DB
157
Unit
Peak Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Working Peak Reverse Voltage
VRMS
35
70
140
280
420
560
700
V
DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Average Rectified Output Current@ 60Hz sine
wave, R-load, TA=25°C
I(AV)
1.5
A
Non-repetitive Surge Forward Current@ 60Hz
sine wave, 1 cycle, TJ=25°C
IFSM
30
A
Current Squared Time
1
I
2t
3.7
A
2S
Peak Forward Voltage@ IFM=1.5A, pulse
measurement, rating of per diode
VFM
1.1
V
Peak Reverse Current@ VRM=VRRM, pulse
measurement, rating of per diode
IRRM
10
µA
Thermal Resistance from Junction to Ambient@
on a glass-epoxy substrate
RθJA
68
°C / W
Thermal Resistance from Junction to Lead
RθJL
15
°C / W
Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Notes:
1.
1ms≤t<8.3ms, TJ=25°C, rating of per diode.
DB
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
8.13
8.51
F
0.46
0.58
B
7.6
8.9
G
1.27
2.03
C
2.8
3.3
H
3.81
4.69
D
6.2
6.5
J
0.89
1.14
E
5
5.2


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